대체 부품
Price @ 1000
$ 1.565
$ 4.87
$ 4.87
Stock
546,678
393,458
393,458
Authorized Distributors
2
1
1
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
73 A
73 A
73 A
Threshold Voltage
4 V
-
-
Rds On Max
14 mΩ
14 mΩ
14 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
190 W
190 W
190 W
Input Capacitance
3.55 nF
3.55 nF
3.55 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-10-11
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2012-07-27
LTD Date2013-01-27
관련 부품
InfineonIRF2807SPBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 13 Milliohms;ID 82A;D2Pak;PD 230W;VGS +/-20V
InfineonIRFS4410TRLPBF
INFINEON IRFS4410TRLPBF MOSFET Transistor, N Channel, 88 A, 100 V, 0.008 ohm, 10 V, 4 VNew
설명
유통업체에서 제공한 Infineon IRFS4610TRLPBF에 대한 설명입니다.
Single N-Channel 100 V 14 mOhm 140 nC HEXFET® Power Mosfet - D2PAK
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 73A 3-Pin (2+Tab) D2PAK T/R
Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Mosfet, N-Ch, 100V, 73A, 175Deg C, 190W; Transistor Polarity:N Channel; Continuous Drain Current Id:73A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.011Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Infineon Technologies IRFS4610TRLPBF
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)73 A
Current Rating73 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time70 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.55 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance14 mΩ
Package Quantity800
PackagingBulk
Power Dissipation190 W
Rds On Max14 mΩ
Resistance14 MΩ
Rise Time87 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time53 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)100 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책