유통업체에서 제공한 Infineon IRF2807STRLPBF에 대한 설명입니다.
Single N-Channel 75V 13 mOhm 160 nC HEXFET® Power Mosfet - D2PAK
Power MOSFET, N Channel, 75 V, 82 A, 0.013 ohm, TO-263 (D2PAK), Surface Mount
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 75V 82A 3-Pin(2+Tab) D2PAK T/R
IRF2807STRLPBF,MOSFET, 75V, 82 A, 13 MOHM, 106.7 NC QG, D2-P
HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:82A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:200W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRF2807STRLPBF.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 82 / Drain-Source Voltage (Vds) V = 75 / ON Resistance (Rds(on)) mOhm = 13 / Gate-Source Voltage V = 20 / Fall Time ns = 48 / Rise Time ns = 64 / Turn-OFF Delay Time ns = 49 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 230