가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFS4410TRLPBF | 3,135 | 1h | |||||||||
| RS (Formerly Allied Electronics) | IRFS4410TRLPBF | 0 | 3200 | Bulk | 18h | |||||||
| Farnell | IRFS4410TRLPBF | 0 | 1 | Cut Tape | 1d | |||||||
| Win Source | WS-IRFS4410TRLPBF | 619 | 11 | 2h | ||||||||
| Worldway Electronics | IRFS4410TRLPBF | 13,482 | 7 | Tape & Reel | 1h |
대체 부품
Price @ 1000
$ 1.61
$ 2.404
Stock
247,570
146,477
Authorized Distributors
3
4
Mount
Surface Mount
-
Case/Package
D2PAK
SOT
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
75 A
75 A
Threshold Voltage
4 V
-
Rds On Max
10 mΩ
8.8 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
200 W
230 W
Input Capacitance
5.15 nF
8.25 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-11-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
관련 부품
InfineonIRF1407STRLPBF
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078Ω, Id = 100A⑥) | MOSFET N-CH 75V 100A D2PAK
InfineonIRF3808SPBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5.9Milliohms;ID 106A;D2Pak;PD 200W;VGS +/-2
STMicroelectronicsSTB120NF10T4
N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in D2PAK package
STMicroelectronicsSTB80NF10T4
N-Channel 100V - 0.012Ohm - 80A - D2PAK LOW GATE CHARGE STripFET(TM) MOSFET
설명
유통업체에서 제공한 Infineon IRFS4410TRLPBF에 대한 설명입니다.
Single N-Channel 100 V 10 mOhm 180 nC HEXFET® Power Mosfet - D2PAK
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Trans MOSFET N-CH 100V 96A 3-Pin (2+Tab) D2PAK T/R
Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 100V, 88A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 88A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.008o; Available until stocks are exhausted Alternative available
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:88A; On Resistance Rds(On):0.008Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time50 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.15 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance10 mΩ
Package Quantity800
Power Dissipation200 W
Rds On Max10 mΩ
Resistance10 MΩ
Rise Time80 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time55 ns
Turn-On Delay Time24 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책