Infineon IRF630NSTRLPBF

Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - D2PAK

Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) | MOSFET N-CH 200V 9.3A D2PAK

200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R

IRF630NSTRLPBF,MOSFET, 200V, 9 .5A, 300 MOHM, 23.3 NC QG, D2

HEXFET POWER MOSFET Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

N CHANNEL MOSFET, 200V, 9.3A D2-PAK; Tra; N CHANNEL MOSFET, 200V, 9.3A D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.3 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 300 / Gate-Source Voltage V = 20 / Fall Time ns = 15 / Rise Time ns = 14 / Turn-OFF Delay Time ns = 27 / Turn-ON Delay Time ns = 7.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 82