Infineon IRF630NSPBF

Name: Infineon IRF630NSPBF
Brand: Infineon
SKU: IRF630NSPBF

200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

$ 1.33

Obsolete

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모든 가격 할인 보기

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF630NSPBF	0	850	Bulk				1.330	1.260	17h
Farnell	IRF630NSPBF	0	5			1.511*	1.193*	0.810*	0.782*	11h
Win Source	WS-IRF630NSPBF	14,450	105					0.378	0.378	2h
Worldway Electronics	IRF630NSPBF	9,386	7	Tube		0.126	0.122	0.116	0.116	1h
Aztech	IRF630NSPBF	611			19.770	19.770	19.770	19.770	19.770	21h

CAD 모델

심볼, 풋프린트 및 3D STEP 다운로드

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데이터시트 및 문서

Infineon IRF630NSPBF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet11 페이지15년 전

Datasheet12 페이지15년 전

element14 APAC

RS (Formerly Allied Electronics)

iiiC

Farnell

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InfineonIRF630NSPBF

InfineonIRF630NSTRLPBF

Price @ 1000

$ 1.33

$ 1.63

Stock

127,877

579,083

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

200 V

Continuous Drain Current (ID)

9.3 A

Threshold Voltage

4 V

Rds On Max

300 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

82 W

Input Capacitance

575 pF

공급망

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-10-12

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

설명

유통업체에서 제공한 Infineon IRF630NSPBF에 대한 설명입니다.

200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK Tube

Verical

MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 82 W

Distrelec

HEXFET POWER MOSFET Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9.3A; On Resistance, Rds(on):300mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

Newark

MOSFET, N, 200V, 9.5A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:82W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:94mJ; Capacitance Ciss Typ:575pF; Current Iar:9.3A; Current Id Max:9.3A; Current Idss Max:25µA; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.16mm; Fall Time tf:15ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.83°C/W; N-channel Gate Charge:35nC; No. of Transistors:1; On State resistance @ Vgs = 10V:300mohm; Package / Case:D2-PAK; Power Dissipation Pd:82W; Power Dissipation Pd:82W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:37A; Rise Time:14ns

element14 APAC