대체 부품
Price @ 1000
$ 1.402
$ 1.53
Stock
184,374
71,918
Authorized Distributors
2
1
Mount
Surface Mount
Surface Mount, Through Hole
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
200 V
200 V
Continuous Drain Current (ID)
18 A
18 A
Threshold Voltage
-
4.9 V
Rds On Max
105 mΩ
105 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
100 W
100 W
Input Capacitance
1.2 nF
1.2 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-05-14
Lifecycle StatusObsolete (Last Updated: 7 months ago)
관련 부품
InfineonIRF640NSTRLPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
InfineonIRF640NSPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
설명
유통업체에서 제공한 Infineon IRFS4020TRLPBF에 대한 설명입니다.
Single N-Channel 200 V 105 mOhm 29 nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R
AUDIO MOSFET, 200V, 18A, 105 MOHM, 18 NC QG, D2-PAK | Infineon IRFS4020TRLPBF
200V Single N-Channel Digital Audio HEXFET Power MOSFET Switch in a D2Pak package, D2PAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 18A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Mosfet, N-Ch, 200V, 18A, To-263; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.085Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.9V; Power Rohs Compliant: Yes |Infineon Technologies IRFS4020TRLPBF
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 18 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 105 / Gate-Source Voltage V = 20 / Fall Time ns = 6.3 / Rise Time ns = 12 / Turn-OFF Delay Time ns = 16 / Turn-ON Delay Time ns = 7.8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 100
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- INFINEON TECHNOLOGIE
- NFINEON
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- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)18 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance105 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time6.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation100 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance105 mΩ
Package Quantity800
Power Dissipation100 W
Rds On Max105 mΩ
Rise Time12 ns
Schedule B8541290080
Turn-Off Delay Time16 ns
Turn-On Delay Time7.8 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.652 mm