공급망
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1993-09-01
Lifecycle StatusProduction (Last Updated: 5 months ago)
관련 부품
VishayIRF9640STRRPBF
MOSFET P-CH 200V 11A D2PAK / P-Channel 200 V 11A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
InfineonIRF6215STRLPBF
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.29Ohm;ID -13A;D2Pak;PD 110W;VGS +/-20V
InfineonIRF6215STRRPBF
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.29Ohm;ID -13A;D2Pak;PD 110W;VGS +/-20V
설명
유통업체에서 제공한 Vishay IRF9640SPBF에 대한 설명입니다.
Single P-Channel 200 V 0.5 Ohms Surface Mount Power Mosfet - D2PAK-3
Trans MOSFET P-CH 200V 11A 3-Pin (2+Tab) D2PAK
MOSFET P-CH 200V 11A D2PAK | Siliconix / Vishay IRF9640SPBF
HEXFET POWER MOSFET Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Transistor Polarity:p Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.5Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: No
MOSFET, P, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-200V; Current, Id Cont:11A; Resistance, Rds On:0.5ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:44A; Power Dissipation:125W; Power Dissipation on 1 Sq. PCB:3W; Power, Pd:125W; SMD Marking:IRF9640S; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Voltage, Vds:200V; Voltage, Vds Max:200V; Voltage, Vgs th Max:-4V
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기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance500 mΩ
Drain to Source Voltage (Vdss)-200 V
Element ConfigurationSingle
Fall Time38 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
Power Dissipation3 W
Rds On Max500 mΩ
Resistance500 mΩ
Rise Time43 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time39 ns
Turn-On Delay Time14 ns
Dimensions
Height5.08 mm
Length10.67 mm
Width9.65 mm