Infineon IPB034N06L3GATMA1

Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R

Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger.In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.

MOSFET, N CH, 90A, 60V, PG-TO263-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.7mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Current Id Max:90A; Power Dissipation Pd:167W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 90 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 3.4 / Gate-Source Voltage V = 20 / Fall Time ns = 13 / Rise Time ns = 78 / Turn-OFF Delay Time ns = 64 / Turn-ON Delay Time ns = 25 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 167