공급망
Country of OriginMalaysia, Mexico
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-02-29
Lifecycle StatusProduction (Last Updated: 1 week ago)
관련 부품
InfineonIPB029N06N3GATMA1
OptiMOS™3 Power-Transistor Features Ideal for high frequency switching and sync. rec.
InfineonIPB034N06L3GATMA1
167W 20V 2.2V 59nC@ 4.5V 1N 60V 3.4m¦¸@ 10V 90A 10nF@ 30V TO-263 , 10mm*9.25mm*4.4mm
VishaySUM55P06-19L-E3
Power MOSFET, P Channel, 60 V, 55 A, 0.015 ohm, TO-263 (D2PAK), Surface Mount
설명
유통업체에서 제공한 Infineon IPB037N06N3GATMA1에 대한 설명입니다.
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger.In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
MOSFET, N CH, 90A, 30V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:188W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:188W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-263
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)90 A
Drain to Source Resistance3.7 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance8 nF
Max Dual Supply Voltage60 V
Max Operating Temperature175 °C
Max Power Dissipation188 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance3.7 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation150 W
Rise Time70 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time40 ns
Turn-On Delay Time30 ns
규정 준수
환경 분류
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
규정 준수 정책