공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-12-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-09-19
LTD Date2013-03-19
관련 부품
InfineonIPB057N06NATMA1
Power MOSFET, N Channel, 60 V, 45 A, 0.0049 ohm, TO-263 (D2PAK), Surface Mount
InfineonIPB081N06L3GATMA1
In a Pack of 25, N-Channel MOSFET, 50 A, 60 V, 3-Pin D2PAK Infineon IPB081N06L3GATMA1
VishaySUM55P06-19L-E3
Power MOSFET, P Channel, 60 V, 55 A, 0.015 ohm, TO-263 (D2PAK), Surface Mount
설명
유통업체에서 제공한 Infineon IRFZ44VSPBF에 대한 설명입니다.
Trans MOSFET N-CH 60V 55A 3-Pin (2+Tab) D2PAK
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET, 60V, 55A, 16.5 MOHM, 44.7 NC QG, D2-PAK
Power Field-Effect Transistor, 55A I(D), 60V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, 60V, 55A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:60V; On Resistance Rds(on):16.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:115W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:55A; Junction to Case Thermal Resistance A:1.3°C/W; On State resistance @ Vgs = 10V:16.5mohm; Package / Case:D2-PAK; Power Dissipation Pd:115W; Power Dissipation Pd:115W; Pulse Current Idm:220A; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)55 A
Current Rating55 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance16.5 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.81 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation115 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation115 W
Resistance16.5 mΩ
Rise Time97 ns
Threshold Voltage4 V
Turn-Off Delay Time40 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)60 V
Dimensions
Height4.957 mm