공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-03-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
InfineonIPB037N06N3GATMA1
MOSFET N-CH 60V 90A D2PAK N-Channel 60 V 90A (Tc) 188W (Tc) Surface Mount PG-TO263-3
InfineonIPB034N06L3GATMA1
MOSFET N-CH 60V 90A D2PAK N-Channel 60 V 90A (Tc) 167W (Tc) Surface Mount PG-TO263-3
InfineonIPB034N06N3GATMA2
N-CHANNEL POWER MOSFET N-Channel 60 V 100A (Tc) 167W (Tc) Surface Mount PG-TO263-7-3
VishaySUM55P06-19L-E3
Power MOSFET, P Channel, 60 V, 55 A, 0.015 ohm, TO-263 (D2PAK), Surface Mount
설명
유통업체에서 제공한 onsemi FDB070AN06A0에 대한 설명입니다.
N-Channel 60 V 7 mOhm Surface Mount PowerTrench Mosfet D2PAK-3
N-Channel PowerTrench® MOSFET 60V, 80A, 7mΩ
Power Field-Effect Transistor, 15A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
175W(Tc) 20V 4V@ 250µA 66nC@ 10 V 1individualNChannel 60V 7mΩ@ 80A,10V 15A，80A 3nF@25V D2PAK，TO-263 SMD mount 10.67mm*9.65mm*4.83mm
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):6.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:175W; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-263; Power Dissipation Pd:175W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-263
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)15 A
Current Rating80 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation175 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
Power Dissipation175 W
Rds On Max7 mΩ
Resistance7 MΩ
Rise Time159 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time27 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)60 V
Dimensions
Height5.08 mm
Length10.67 mm
Width11.33 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책