공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-03-14
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-01-31
LTD Date2011-07-31
관련 부품
InfineonIPB029N06N3GATMA1
OptiMOS™3 Power-Transistor Features Ideal for high frequency switching and sync. rec.
설명
유통업체에서 제공한 Infineon IPB100N06S3-04에 대한 설명입니다.
Trans MOSFET N-CH 55V 100A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK
MOSFET N-CH 55V 100A TO-263
Power Field-Effect Transistor, 100A I(D), 55V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET N-CH 55V 100A TO263-3
TO263-3/AUTOMOTIVE MOS TRANSISTO
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
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- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-263
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)100 A
Current Rating100 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance4.1 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time62 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance14.23 nF
Max Operating Temperature175 °C
Max Power Dissipation214 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation214 W
Rds On Max4.1 mΩ
Rise Time62 ns
Turn-Off Delay Time62 ns
Voltage Rating (DC)55 V