대체 부품
Price @ 1000
$ 0.094
$ 0.093
Stock
21,497,362
6,878,287
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23-3
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
190 mA
190 mA
Threshold Voltage
-
-
Rds On Max
6 Ω
6 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
500 mW
500 mW
Input Capacitance
15.7 pF
20.9 pF
공급망
Country of OriginAustria, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-03-22
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
InfineonBSS119NH6327XTSA1
Power MOSFET, N Channel, 100 V, 190 mA, 2.406 ohm, SOT-23, Surface Mount
onsemiBSS123LT1G
Transistor: N-MOSFET; unipolar; 100V; 0.17A; 6ohm; 225mW; -55+150 deg.C; SMD; SOT23; AEC-Q100
설명
유통업체에서 제공한 Infineon BSS123NH6327XTSA1에 대한 설명입니다.
Power MOSFET, N Channel, 100 V, 190 mA, 6 Ohm, SOT-23, 3 Pins, Surface Mount
Mosfet, N-Ch, 100V, 0.19A, Sot-23 Rohs Compliant: Yes |Infineon Technologies BSS123NH6327XTSA1
Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 T/R
Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)190 mA
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance6 Ω
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance15.7 pF
Max Dual Supply Voltage100 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance6 Ω
Package Quantity3000
PackagingTape & Reel
Power Dissipation500 mW
Rds On Max6 Ω
Rise Time3.2 ns
Schedule B8541210080
Turn-Off Delay Time7.4 ns
Turn-On Delay Time2.3 ns
Dimensions
Height1.1 mm
Length2.9 mm
Width1.3 mm
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
규정 준수 정책