공급망
Country of OriginAustria, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-03-22
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
InfineonBSS123NH6327XTSA1
Power MOSFET, N Channel, 100 V, 190 mA, 6 Ohm, SOT-23, 3 Pins, Surface Mount
onsemiBSS123LT1G
Transistor: N-MOSFET; unipolar; 100V; 0.17A; 6ohm; 225mW; -55+150 deg.C; SMD; SOT23; AEC-Q100
InfineonBSS169H6327XTSA1
Power MOSFET, N Channel, 100 V, 170 mA, 2.9 Ohm, SOT-23, 3 Pins, Surface Mount
설명
유통업체에서 제공한 Infineon BSS119NH6327XTSA1에 대한 설명입니다.
Power MOSFET, N Channel, 100 V, 190 mA, 2.406 ohm, SOT-23, Surface Mount
Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 T/R Automotive AEC-Q101
MOSFET, N-CH, 100V, 0.19A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:190mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):2.406ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.
Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 190 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) Ohm = 6 / Gate-Source Voltage V = 20 / Fall Time ns = 18.8 / Rise Time ns = 3.3 / Turn-OFF Delay Time ns = 7 / Turn-ON Delay Time ns = 2.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)190 µA
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance6 Ω
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time18.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance15.7 pF
Max Dual Supply Voltage100 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance6 Ω
Package Quantity3000
PackagingTape & Reel
Power Dissipation500 mW
Rds On Max6 Ω
Rise Time3.3 ns
Schedule B8541210080
Turn-Off Delay Time7 ns
Turn-On Delay Time2.7 ns
Dimensions
Height1.1 mm
Length2.9 mm
Width1.3 mm
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
규정 준수 정책