가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | BSS123NH6433XTMA1 | 3,580,000 | 10K | 3d | ||||||||
| Newark | BSS123NH6433XTMA1 | 807 | 1 | Cut Tape | ||||||||
| Future Electronics | BSS123NH6433XTMA1 | 20,000 | 10K | Tape & Reel | ||||||||
| Arrow Electronics | BSS123NH6433XTMA1 | 39,268 | 1 | |||||||||
| DigiKey | BSS123NH6433XTMA1CT-ND | 78,347 | 1 | Cut Tape |
대체 부품
Price @ 1000
$ 0.08
$ 0.079
Stock
6,861,761
19,604,886
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
190 mA
190 mA
Threshold Voltage
-
-
Rds On Max
6 Ω
6 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
500 mW
500 mW
Input Capacitance
20.9 pF
15.7 pF
공급망
Country of OriginAustria, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-11-21
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
관련 부품
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BSS84P Series 60 V 8 Ohm P-Channel SIPMOS® Small-Signal-Transistor - SOT-23-3
설명
유통업체에서 제공한 Infineon BSS123NH6433XTMA1에 대한 설명입니다.
Mosfet, N-Ch, 100V, 0.19A, Sot-23 Rohs Compliant: Yes |Infineon Technologies BSS123NH6433XTMA1
Trans MOSFET N-CH 100V 0.19A Automotive 3-Pin SOT-23
Infineon NMOS OptiMOS, Vds=100 V, 190 mA, SOT-23, , 3
Small Signal Field-Effect Transistor, 0.19A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 190 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) Ohm = 6 / Gate-Source Voltage V = 20 / Fall Time ns = 22 / Rise Time ns = 3.2 / Turn-OFF Delay Time ns = 7.4 / Turn-ON Delay Time ns = 2.3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
제조업체 별칭
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- Infineon Technologies
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- SIM
- INFIEON
- INFINEON TECH
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- INFINEON/IR
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
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- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)190 mA
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance6 Ω
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance20.9 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation500 mW
Rds On Max6 Ω
Rise Time3.2 ns
Turn-Off Delay Time7.4 ns
Turn-On Delay Time2.3 ns
Dimensions
Height1.1 mm
Length2.9 mm
Width1.3 mm