Vishay SI4686DY-T1-GE3

Trans Mosfet N-ch 30V 13.8A 8-PIN SOIC N T/r
$ 0.711
NRND
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
DigiKey
3
SI4686DY-T1-GE3CT-ND60131Cut Tape
TME
2
SI4686DY-T1-GE302500
16h
TTISI4686DY-T1-GE302500Tape & Reel
20h
Newark
2
SI4686DY-T1-GE302500Cut Tape
AvnetSI4686DY-T1-GE302500
2d

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Vishay SI4686DY-T1-GE3.

Newark

Datasheet9 pagine9 anni fa
Datasheet10 pagine10 anni fa
Datasheet10 pagine10 anni fa
Datasheet10 pagine11 anni fa

Farnell

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VishaySI4686DY-T1-GE3
VishaySI4686DY-T1-E3
Price @ 1000
$ 0.711
$ 0.64
Stock
175,013
210,623
Authorized Distributors
5
6
Mount
Surface Mount
Surface Mount
Case/Package
SO
SO
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
13.8 A
13.8 A
Threshold Voltage
-
1 V
Rds On Max
9.5 mΩ
9.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3 W
3 W
Input Capacitance
1.22 nF
1.22 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-06-15
Lifecycle StatusNRND (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di Vishay SI4686DY-T1-GE3 fornite dai suoi distributori.

Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R
Avnet
3W(Ta),5.2W(Tc) 20V 3V@ 250¦ÌA 26nC@ 10 V 1N 30V 9.5m¦¸@ 13.8A,10V 18.2A 1.22nF@15V SOIC-8 1.75mm
Unikeyic (ICkey)
N CHANNEL MOSFET, 30V, 18.2A, SOIC
element14 APAC
Small Signal Field-Effect Transistor, 13.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
MOSFET SO8S N 0.0144R 30V 13A~NH4219262
Component Sense
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:18.2A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:3V ;RoHS Compliant: Yes
Newark

Immagini

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Newark
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