Vishay SI4686DY-T1-E3
$ 0.64
NRND
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | SI4686DY-T1-E3 | 1224 | 86 | |||||||||
| Future Electronics | SI4686DY-T1-E3 | 2500 | 2500 | Tape & Reel | ||||||||
| TME | SI4686DY-T1-E3 | 1224 | 1 | 11h | ||||||||
| DigiKey | SI4686DY-T1-E3CT-ND | 1409 | 1 | Cut Tape | ||||||||
| TTI | SI4686DY-T1-E3 | 0 | 2500 | Tape & Reel | 23h |
Cronologia dell'inventario
Tendenza a 3 mesi: +35.80%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.64
$ 0.711
Stock
210,623
175,013
Authorized Distributors
6
5
Mount
Surface Mount
Surface Mount
Case/Package
SO
SO
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
13.8 A
13.8 A
Threshold Voltage
1 V
-
Rds On Max
9.5 mΩ
9.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3 W
3 W
Input Capacitance
1.22 nF
1.22 nF
Descrizioni
Descrizioni di Vishay SI4686DY-T1-E3 fornite dai suoi distributori.
Single N-Channel 30 V 9.5 mOhms Surface Mount Power Mosfet - SOIC-8
Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:18200mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:3W ;RoHS Compliant: Yes
MOSFET, N CH, 30V, 18.2A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:18.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0078ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: +35.80%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSO
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)13.8 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance9.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.22 nF
Max Operating Temperature150 °C
Max Power Dissipation5.2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3 W
Rds On Max9.5 mΩ
Resistance9.5 mΩ
Rise Time20 ns
Threshold Voltage1 V
Turn-Off Delay Time20 ns
Turn-On Delay Time20 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità