STMicroelectronics STD2NK90ZT4

N-channel 900V - 5.5 Ohm - 2.1A - TO-220 Zener-protected Supermesh Mosfet
$ 0.849
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Prezzo e stock

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DistributorSKUMinPkg
Future Electronics
2
STD2NK90ZT445.0002500Tape & Reel
Avnet
2
STD2NK90ZT425.0002500
10h
Newark
2
STD2NK90ZT425.0002500Tape & Reel
VericalSTD2NK90ZT410.0002500
Arrow ElectronicsSTD2NK90ZT410.0002500

Schede tecniche e documenti

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Components Direct

Datasheet18 pagine20 anni fa

element14 APAC

TME

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-10-05
Lifecycle StatusProduction (Last Updated: 1 month ago)

Parti correlate

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N-CHANNEL 800V - 3.8 Ohm - 2.5A DPAK Zener-Protected SuperMESH™ Power MOSFET
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STMicroelectronicsSTD3NK90ZT4
N-channel 900 V, 4.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) Power MOSFET in DPAK package
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STMicroelectronicsSTD2NK100Z
N-channel 1000 V, 6.25 Ohm typ., 1.85 A, Zener-protected SuperMESH Power MOSFET in DPAK package
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onsemiFQD2N90TM
N-Channel Power MOSFET, QFET®, 900 V, 1.7 A, 7.2 Ω, DPAK
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onsemiFQD2N80TM
N-Channel QFET® MOSFET 800V, 1.8A, 6.3Ω
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onsemiFQD2N100TM
N-Channel Power MOSFET, QFET®, 1000 V, 1.6 A, 9 Ω, DPAK
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Descrizioni

Descrizioni di STMicroelectronics STD2NK90ZT4 fornite dai suoi distributori.

N-CHANNEL 900V - 5.5 Ohm - 2.1A - TO-220 ZENER-PROTECTED SUPERMESH MOSFET
STMicroelectronics
STD2NK90ZT4 N-channel MOSFET Transistor, 2.1 A, 900 V, 3-Pin DPAK
RS (Formerly Allied Electronics)
N-Channel 900 V 6.5 Ohm SMT Zener-Protect SuperMESH MosFet TO-252-3
Future Electronics
Trans MOSFET N-CH 900V 2.1A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 900V 2.1A DPAK
Win Source
Power MOSFET, N Channel, 900 V, 2.1 A, 5 ohm, TO-252 (DPAK), Surface Mount
Avnet
N-channel 900 V, 5 Ohm typ., 2.1 A SuperMESH Power MOSFET in DPAK package
Ciiva
N-CHANNEL 900V-5 OHM-2.1A-DPAK ZENER-PROTECTED SUPER MESH MOSFET Power Field-Effect Transistor, 2.1A I(D), 900V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
ComSIT Distribution GmbH
MOSFET, N-CH, 900V, 2.1A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.1A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; P
Farnell
The SuperMESH(TM) series is obtained through an extreme optimization of ST's well established strip based PowerMESH(TM) layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh(TM) products.

Immagini

TME
Farnell
DKO Electronshik
RS (Formerly Allied Electronics)
Future Electronics
LZChips
iiiC

Alias del produttore

STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics