onsemi FQD2N90TM

N-channel Power Mosfet, Qfet®, 900 V, 1.7 A, 7.2 Ω, Dpak
$ 0.717
Production
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Prezzo e stock

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DistributorSKUMinPkg
AvnetFQD2N90TM75002500
9h
Newark
2
FQD2N90TM41531Cut Tape
Arrow ElectronicsFQD2N90TM22871
Verical
2
FQD2N90TM2240400
Rochester ElectronicsFQD2N90TM2240
7h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FQD2N90TM.

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Technical Drawing1 pagina3 anni fa

IHS

Master Electronics

onsemi

Fairchild Semiconductor

Cronologia dell'inventario

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Parti alternative

Questo componente
Parti alternative
onsemiFQD2N90TM
onsemiFQD2N90TF
Price @ 1000
$ 0.717
$ 0.581
Stock
571,881
589,535
Authorized Distributors
6
1
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
TO-252-3
Drain to Source Voltage (Vdss)
900 V
900 V
Continuous Drain Current (ID)
1.7 A
1.7 A
Threshold Voltage
-
-
Rds On Max
7.2 Ω
7.2 Ω
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
500 pF
500 pF

Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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N-Channel QFET® MOSFET 800V, 1.8A, 6.3Ω
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STMicroelectronicsSTD2NK90ZT4
N-CHANNEL 900V - 5.5 Ohm - 2.1A - TO-220 ZENER-PROTECTED SUPERMESH MOSFET
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onsemiFQD2N100TM
N-Channel Power MOSFET, QFET®, 1000 V, 1.6 A, 9 Ω, DPAK
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onsemiFQD1N80TM
N-Channel Power MOSFET, QFET®, 800 V, 1.0 A, 20 Ω, DPAK
Dettagli
STMicroelectronicsSTD3NK90ZT4
N-channel 900 V, 4.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) Power MOSFET in DPAK package
Dettagli
STMicroelectronicsSTD4NK80ZT4
N-CHANNEL 800V - 3 OHM - 3A DPAK Zener-Protected SuperMESH(TM) Power MOSFET
Dettagli

Descrizioni

Descrizioni di onsemi FQD2N90TM fornite dai suoi distributori.

N-Channel Power MOSFET, QFET®, 900 V, 1.7 A, 7.2 Ω, DPAK
onsemi
TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,1.7A I(D),TO-252AA
Newark
Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IHS
MOSFET, N-CH, 900V, 1.7A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 5.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Powe
Farnell
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Fairchild Semiconductor

Immagini

Farnell
Conrad
Future Electronics

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd