STMicroelectronics STD3NK80ZT4
$ 0.78
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | STD3NK80ZT4 | 5000 | 2500 | 7h | ||||||||
| Newark | STD3NK80ZT4 | 410 | 1 | Cut Tape | ||||||||
| Verical | STD3NK80ZT4 | 47.500 | 2500 | |||||||||
| Arrow Electronics | STD3NK80ZT4 | 47.500 | 2500 | |||||||||
| TME | STD3NK80ZT4 | 691 | 1 | 3h |
Cronologia dell'inventario
Tendenza a 3 mesi: -0.65%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics STD3NK80ZT4.
Modelli CAD
Scarica il simbolo STMicroelectronics STD3NK80ZT4, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 EE Concierge | SimboloImpronta | ||
 Ultra Librarian | SimboloImpronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Parti correlate
STMicroelectronicsSTD4NK80ZT4
N-CHANNEL 800V - 3 OHM - 3A DPAK Zener-Protected SuperMESH(TM) Power MOSFET
STMicroelectronicsSTD2NK90ZT4
N-CHANNEL 900V - 5.5 Ohm - 2.1A - TO-220 ZENER-PROTECTED SUPERMESH MOSFET
STMicroelectronicsSTD3NK90ZT4
N-channel 900 V, 4.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) Power MOSFET in DPAK package
onsemiFQD2N60CTF
Power Field-Effect Transistor, 1.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Descrizioni
Descrizioni di STMicroelectronics STD3NK80ZT4 fornite dai suoi distributori.
N-CHANNEL 800V - 3.8 Ohm - 2.5A DPAK Zener-Protected SuperMESH™ Power MOSFET
STD3NK80ZT4 N-channel MOSFET Transistor, 2.5 A, 800 V, 3-Pin DPAK
Power MOSFET, N Channel, 800 V, 2.5 A, 4.5 Ohm, TO-252 (DPAK), 3 Pins, Surface Mount
N-channel 800 V, 3.8 Ohm typ., 2.5 A SuperMESH Power MOSFET in DPAK package
Ciiva
Power Field-Effect Transistor, 2.5A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N CH, 800V, 2.5A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):3.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Pow
Mosfet, N Channel, 800V, 2.5A, Dpak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:2.5A; Tensión Drenaje-Fuente Vds:800V; Resistencia De Activación Rds(On):3.8Ohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STD3NK80ZT4
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.5 / Drain-Source Voltage (Vds) V = 800 / ON Resistance (Rds(on)) Ohm = 4.5 / Gate-Source Voltage V = 30 / Fall Time ns = 40 / Rise Time ns = 27 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 17 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = DPAK / Pins = 3 / Mounting Type = Through Hole / Packaging = Tape & Reel
Alias del produttore
STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Cronologia dell'inventario
Tendenza a 3 mesi: -0.65%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)2.5 A
Current Rating2.5 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance4.5 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance485 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation70 W
Rds On Max4.5 Ω
Resistance4.5 Ω
Rise Time27 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time36 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)800 V
Dimensions
Height2.52 mm
Length6.6 mm
Width6.2 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics STD3NK80ZT4.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant