onsemi FQD2N100TM
$ 0.86
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | FQD2N100TM | 0 | 2500 | Cut Tape | ||||||||
| Avnet | FQD2N100TM | 0 | 2500 | 14h | ||||||||
| Farnell | FQD2N100TM. | 0 | 2500 | Tape & Reel | 12h | |||||||
| Mouser | 512-FQD2N100TM | 151 | 1 | Tape & Reel | ||||||||
| Component Stockers USA | FQD2N100TM | 13.460 | >1wk |
Cronologia dell'inventario
Tendenza a 3 mesi: -6.20%
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Schede tecniche e documenti
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Modelli CAD
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-03-06
Lifecycle StatusProduction (Last Updated: 5 years ago)
LTB Date2022-06-20
LTD Date2022-12-20
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
STMicroelectronicsSTD2NK90ZT4
N-CHANNEL 900V - 5.5 Ohm - 2.1A - TO-220 ZENER-PROTECTED SUPERMESH MOSFET
STMicroelectronicsSTD4NK80ZT4
N-CHANNEL 800V - 3 OHM - 3A DPAK Zener-Protected SuperMESH(TM) Power MOSFET
STMicroelectronicsSTD3NK90ZT4
N-channel 900 V, 4.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) Power MOSFET in DPAK package
Descrizioni
Descrizioni di onsemi FQD2N100TM fornite dai suoi distributori.
N-Channel Power MOSFET, QFET®, 1000 V, 1.6 A, 9 Ω, DPAK
MOSFET N-CH 1000V 1.6A DPAK / Trans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) DPAK T/R
Power MOSFET, N Channel, 1 kV, 1.6 A, 9 ohm, TO-252 (DPAK), Surface Mount
Power Field-Effect Transistor, 1.6A I(D), 1000V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -6.20%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)1.6 A
Current Rating1.6 A
Drain to Source Breakdown Voltage1 kV
Drain to Source Resistance9 Ω
Drain to Source Voltage (Vdss)1 kV
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance520 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage1 kV
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max9 Ω
Resistance9 Ω
Rise Time30 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time25 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)900 V
Dimensions
Height2.517 mm
Length6.6 mm
Width6.1 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQD2N100TM.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità