onsemi HGTG30N60C3D
$ 4.917
Obsolete
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Questo componente
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Price @ 1000
$ 4.917
$ 2.73
Stock
138,467
18,889
Authorized Distributors
6
1
Mount
Through Hole
-
Case/Package
TO-247
-
Collector Emitter Breakdown Voltage
600 V
-
Max Collector Current
63 A
63 A
Power Dissipation
208 W
-
Collector Emitter Saturation Voltage
1.5 V
-
Reverse Recovery Time
60 ns
-
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1995-08-01
Lifecycle StatusObsolete (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
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Descrizioni
Descrizioni di onsemi HGTG30N60C3D fornite dai suoi distributori.
600V,63A,UFS,SERIES NCH IGBT W/ANTI-PARALLEL HYPERFAST DIODE
600 V, 63 A, N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
IGBT,N CH,600V,30A,TO-247; DC Collector Current:63A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Max:208W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3
IGBT; Transistor Type:IGBT; Transistor Polarity:NPN; Continuous Collector Current, Ic:63A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:208W; Package/Case:TO-247; C-E Breakdown Voltage:600V ;RoHS Compliant: Yes
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49014.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.5 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current63 A
Current Rating30 A
Element ConfigurationSingle
Fall Time275 ns
Max Collector Current63 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation208 W
Min Operating Temperature-40 °C
Number of Elements1
PolarityNPN
Power Dissipation208 W
Reverse Recovery Time60 ns
Rise Time45 ns
Schedule B8541290080
Turn-Off Delay Time320 ns
Turn-On Delay Time40 ns
Voltage Rating (DC)600 V
Dimensions
Height24.75 mm
Length15.87 mm
Width4.82 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità