onsemi FDP8870
$ 0.838
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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1 parte disponibile
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Questo componente
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Price @ 1000
$ 0.838
$ 0.715
Stock
173,456
85,769
Authorized Distributors
2
2
Mount
Through Hole
-
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
30 V
-
Continuous Drain Current (ID)
19 A
75 A
Threshold Voltage
2.5 V
-
Rds On Max
4.1 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
160 W
145 W
Input Capacitance
5.2 nF
-
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-04-15
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Parti correlate
InfineonIRLB8743PBF
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
InfineonIRL3713PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 260A;TO-220AB;PD 330W;-55de
Descrizioni
Descrizioni di onsemi FDP8870 fornite dai suoi distributori.
N-Channel 30 V 4.1 mOhm Flange Mount PowerTrench® Mosfet - TO-220
N-Channel PowerTrench® MOSFET 30V, 156A, 4.1mΩ
30 V, 156 A, 4.1 MILLI OHM N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 19A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)19 A
Current Rating160 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance4.6 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time46 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.2 nF
Max Operating Temperature175 °C
Max Power Dissipation160 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Elements1
Power Dissipation160 W
Rds On Max4.1 mΩ
Resistance4.1 MΩ
Rise Time105 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time70 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)30 V
Dimensions
Height9.4 mm
Length10.67 mm
Width4.83 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità