onsemi FDP8870-F085
Obsolete
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Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDP8870-F085.
Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-07-13
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2018-09-30
LTD Date2019-03-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
Parti correlate
InfineonIRLB8743PBF
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
InfineonIRL3713PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 260A;TO-220AB;PD 330W;-55de
Descrizioni
Descrizioni di onsemi FDP8870-F085 fornite dai suoi distributori.
Trans MOSFET N-CH 30V 19A Automotive 3-Pin(3+Tab) TO-220AB Rail
Power Field-Effect Transistor, 19A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET N-CH 30V 19A/156A TO220-3
N-Channel PowerTrench® 30V, 156A, 4.1mW
FDP8870_F085 Fairchild/ON Semiconductor
Nmos To220 30V 4.1 Mohm / Tube
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)19 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance4.6 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time46 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.2 nF
Max Operating Temperature175 °C
Max Power Dissipation160 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation160 W
Rds On Max4.1 mΩ
Rise Time105 ns
Turn-Off Delay Time70 ns
Turn-On Delay Time11 ns
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDP8870-F085.
Conformità
Classificazione ambientale
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità