Infineon IRL3713PBF
$ 1.03
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: -1.06%
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Supply Chain
Country of OriginMainland China, Usa
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-05-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-03-13
LTD Date2008-09-13
Parti correlate
InfineonIRF2903ZPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.4Milliohms;ID 260A;TO-220AB;PD 290W;-55de
InfineonIRLB8743PBF
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Descrizioni
Descrizioni di Infineon IRL3713PBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 260A;TO-220AB;PD 330W;-55de
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Single N-Channel 30 V 4 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
Trans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB
Power Field-Effect Transistor, 260A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 30V, 200A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:260A; Junction to Case Thermal Resistance A:0.75°C/W; On State resistance @ Vgs = 10V:3mohm; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:1040A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -1.06%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating250 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.89 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation330 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Channels1
Number of Elements1
On-State Resistance3 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation200 W
Rds On Max3 mΩ
Resistance3 mΩ
Rise Time160 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time40 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)30 V
Dimensions
Height20.56 mm
Length10.6426 mm
Width4.82 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità