Infineon IRL7833PBF
$ 2.051
Obsolete
Prezzo e stock
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-07-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
Parti correlate
InfineonIRLB8743PBF
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
InfineonIRL3713PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 260A;TO-220AB;PD 330W;-55de
Descrizioni
Descrizioni di Infineon IRL7833PBF fornite dai suoi distributori.
MOSFET, N Ch., 30V, 150A, 3.8 MOHM, 32 NC QG, TO-220AB, Pb-Free
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Single N-Channel 30 V 4.5 mOhm 47 nC HEXFET® Power Mosfet - TO-220-3
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 140 W
Trans MOSFET N-CH 30V 150A 3-Pin(3+Tab) TO-220AB
HEXFET Power MOSFET Power Field-Effect Transistor, 75A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:150A; On Resistance, Rds(on):3.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
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Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating150 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.8 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time6.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.17 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2.3 V
Number of Channels1
Number of Elements1
On-State Resistance3.8 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation140 W
Rds On Max3.8 mΩ
Recovery Time63 ns
Resistance3.8 MΩ
Rise Time50 ns
Threshold Voltage2.3 V
Turn-Off Delay Time21 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)30 V
Dimensions
Height20.56 mm
Length10.5156 mm
Width4.69 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità