onsemi FDD8447L
$ 0.373
Production
Prezzo e stock
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Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -26.86%
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Questo componente
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Price @ 1000
$ 0.373
$ 0.418
Stock
804,000
176,020
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
TO-252
TO-252
Drain to Source Voltage (Vdss)
40 V
40 V
Continuous Drain Current (ID)
21 A
21 A
Threshold Voltage
1.9 V
-
Rds On Max
8.5 mΩ
8.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.1 W
3.8 W
Input Capacitance
1.97 nF
1.97 nF
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-02-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
VishaySUD45P03-09-GE3
Single P-Channel 30 V 8.7 mOhm Surface Mount TrenchFET Power Mosfet - TO-252
InfineonIPD036N04LGBTMA1
MOSFET N-CH 40V 90A TO252-3 / N-Channel 40 V 90A (Tc) 94W (Tc) Surface Mount PG-TO252-3
Descrizioni
Descrizioni di onsemi FDD8447L fornite dai suoi distributori.
N-Channel 40 V 8.5 mOhm Surface Mount PowerTrench Mosfet TO-252-3
N-Channel PowerTrench® MOSFET, 40V, 50A, 8.5mΩ
Power Field-Effect Transistor, 21A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N CH, 40V, 50A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Powe
This N–Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -26.86%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-252
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)21 A
Current Rating54 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance8.5 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.97 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs1.9 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation3.1 W
Rds On Max8.5 mΩ
Resistance8.5 MΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage1.9 V
Turn-Off Delay Time38 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)40 V
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità