Infineon IPD090N03LGATMA1
$ 0.321
Production
Prezzo e stock
Distributori autorizzati
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IPD090N03LGATMA1 | 2087 | 5 | Cut Tape | ||||||||
| Arrow Electronics | IPD090N03LGATMA1 | 24 | 1 | |||||||||
| Future Electronics | IPD090N03LGATMA1 | 37.500 | 2500 | Tape & Reel | ||||||||
| DigiKey | IPD090N03LGATMA1CT-ND | 93.617 | 1 | Cut Tape | ||||||||
| Avnet | IPD090N03LGATMA1 | 0 | 2500 | 2d |
Cronologia dell'inventario
Tendenza a 3 mesi: +2.00%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-10-23
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
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Diodes Inc.DMG4511SK4-13
Mosfet, Dual, N/P-Ch, 35V, 5.3A Rohs Compliant: Yes |Diodes Inc. DMG4511SK4-13
Descrizioni
Descrizioni di Infineon IPD090N03LGATMA1 fornite dai suoi distributori.
N-channel MOSFET Transistor, 40 A, 30 V, 3-pin PG-TO-252-3-11
MOSFET, N CH, 40A, 30V, PG-TO252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.2V;
Mosfet, N Channel, 30V, 40A, To-252; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:40A; Tensión Drenaje-Fuente Vds:30V; Resistencia De Activación Rds(On):0.0075Ohm; Tensión Vgs De Medición Rds(On):10V |Infineon IPD090N03L G
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 2.6 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 42
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +2.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)40 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time2.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Operating Temperature175 °C
Max Power Dissipation42 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance9 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation42 W
Rds On Max9 mΩ
Rise Time3 ns
Schedule B8541290080
Turn-Off Delay Time15 ns
Turn-On Delay Time4 ns
Conformità
Classificazione ambientale
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità