onsemi FDD8453LZ
$ 0.665
EOL
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Cronologia dell'inventario
Tendenza a 3 mesi: -6.13%
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Schede tecniche e documenti
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-09-27
Lifecycle StatusEOL (Last Updated: 5 days ago)
LTB Date2023-12-30
LTD Date2024-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
Parti correlate
VishaySUD45P03-09-GE3
Single P-Channel 30 V 8.7 mOhm Surface Mount TrenchFET Power Mosfet - TO-252
VishaySUD42N03-3M9P-GE3
SUD42N03-3M9P-GE3 N-CHANNEL MOSFET TRANSISTOR, 107 A, 30 V, 3-PIN TO-252AA
InfineonIPD040N03LGATMA1
N-Channel 30 V 90 A 4 mOhm Surface Mount OptiMOS Power-Transistor - PG-TO252-3
Descrizioni
Descrizioni di onsemi FDD8453LZ fornite dai suoi distributori.
Power Trench® MOSFET, N-Channel, 40V, 50A, 6.7mΩ
N-Channel 40 V 50 A 6.7 mOhm Surface Mount PowerTrench® Mosfet - TO-252-3
TAPE REEL/40V, 50A, 6.7m ohm, NCH POWER TRENCH MOSFET
N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 50A I(D), 40V, 0.0106ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 50A, 40V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Pow
PMIC - Power Supply Controllers, Monitors 1 (Unlimited) Tape & Reel (TR) 8-SOIC (0.154, 3.90mm Width) Surface Mount -40°C~105°C Power Supply Controller 6V~16V ANALOG CIRCUIT 8 IC SIGNAL DISCONNECT 2CH 8SOIC
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -6.13%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-252
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)50 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance10.6 mΩ
Drain to Source Voltage (Vds)40 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.515 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation65 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.1 W
Rds On Max6.7 mΩ
Resistance6.7 MΩ
Rise Time6 ns
Schedule B8541290080
Turn-Off Delay Time37 ns
Turn-On Delay Time11 ns
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDD8453LZ.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Dichiarazioni di conformità