onsemi FDD6680AS
$ 0.594
Obsolete
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Schede tecniche e documenti
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Questo componente
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Price @ 1000
$ 0.594
$ 1.328
Stock
245,339
236,256
Authorized Distributors
4
3
Mount
Surface Mount
-
Case/Package
TO-252
TO-252
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
55 A
55 A
Threshold Voltage
1.4 V
-
Rds On Max
10.5 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.3 W
60 W
Input Capacitance
1.2 nF
-
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-02-24
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-02-17
LTD Date2021-08-17
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
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Descrizioni
Descrizioni di onsemi FDD6680AS fornite dai suoi distributori.
N-Channel PowerTrench® SyncFET™ MOSFET, 30V, 55A, 10.5mΩ
N-Channel 30 V 55 A 10.5 mO Surface Mount PowerTrench Mosfet - DPAK
Power Field-Effect Transistor, 55A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N, SMD, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:60mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:55A; Package / Case:DPAK; Power Dissipation Pd:60mW; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
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1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)55 A
Current Rating55 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance10.5 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.4 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.3 W
Rds On Max10.5 mΩ
Rise Time6 ns
TerminationSMD/SMT
Threshold Voltage1.4 V
Turn-Off Delay Time28 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)30 V
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDD6680AS.
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità