NXP Semiconductors MMRF1008HR5
$ 481.395
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | MMRF1008HR5 | 50 | 7h | |||||||||
| UnikeyIC | MMRF1008HR5 | 47 | 1 | Tape & Reel | 8h | |||||||
| Flip Electronics | MMRF1008HR5 | 150 | 20h | |||||||||
| Newark | MMRF1008HR5 | 0 | 50 | |||||||||
| RFMW | MMRF1008HR5 | 0 | 1 | 9h |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 481.395
$ 612.64
Stock
69,077
66,358
Authorized Distributors
6
6
Mount
Screw
Screw, Surface Mount
Case/Package
-
-
Drain to Source Voltage (Vdss)
-
110 V
Continuous Drain Current (ID)
-
-
Threshold Voltage
-
-
Rds On Max
-
-
Gate to Source Voltage (Vgs)
10 V
10 V
Power Dissipation
-
-
Input Capacitance
-
-
Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00
Introduction Date2013-12-20
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2023-06-30
LTD Date2023-12-31
Parti correlate
NXP SemiconductorsMRFE6VP100HR5
RF Power Transistor,1.8 to 2000 MHz, 100 W, Typ Gain in dB is 27.2 @ 512 MHz, 50 V, LDMOS, SOT1827
NXP SemiconductorsMRFE6VP61K25HR5
Wideband Rf Power Ldmos Transistor, 1.8-600 Mhz, 1250 W Cw, 50 V Rohs Compliant: Yes
NXP SemiconductorsMRFE6VP6300HR5
RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827
Descrizioni
Descrizioni di NXP Semiconductors MMRF1008HR5 fornite dai suoi distributori.
Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
RF Power Transistor,960 to 1215 MHz, 275 W, Typ Gain in dB is 20.3 @ 1030 MHz, 50 V, LDMOS, SOT1792
Transistor RF FET N-CH 100V 900MHz to 1215MHz 2-Pin NI-780H T/R
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 110V 2-Pin NI-780H T/R
10V 2.4V 100V 695pF@ 50V NI-780H-2L 4.32mm
IC CTLR PFC CCM COMPACT FF 8SOIC
Alias del produttore
NXP Semiconductors ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. NXP Semiconductors può anche essere conosciuto con i seguenti nomi:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Body MaterialCeramic
MountScrew
Number of Pins2
Number of Terminals2
Technical
Frequency1.03 GHz
Gain20.3 dB
Gate to Source Voltage (Vgs)10 V
Max Operating Temperature225 °C
Min Breakdown Voltage110 V
Min Operating Temperature-65 °C
Number of Elements1
Output Power275 W
PackagingTape & Reel (TR)
Test Current100 mA
Test Voltage50 V
Voltage Rating100 V
Conformità
Classificazione ambientale
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità