NXP Semiconductors MRFE6VP100HR5
$ 170.37
EOL
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | MRFE6VP100HR5 | 0 | 50 | Cut Tape | ||||||||
| RFMW | MRFE6VP100HR5 | 0 | 1 | 22h | ||||||||
| Future Electronics | MRFE6VP100HR5 | 0 | 50 | Tape & Reel | ||||||||
| Avnet | MRFE6VP100HR5 | 0 | 50 | 3d | ||||||||
| Arrow Electronics | MRFE6VP100HR5 | 0 | 50 |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per NXP Semiconductors MRFE6VP100HR5.
Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00
Introduction Date2012-05-22
Lifecycle StatusEOL (Last Updated: 3 weeks ago)
LTB Date2026-09-30
LTD Date2027-09-30
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Descrizioni
Descrizioni di NXP Semiconductors MRFE6VP100HR5 fornite dai suoi distributori.
RF Power Transistor,1.8 to 2000 MHz, 100 W, Typ Gain in dB is 27.2 @ 512 MHz, 50 V, LDMOS, SOT1827
RF Power Field-Effect Transistor, 2-Element, L Band, N-Channel, Metal-oxide Semiconductor FET
MRFE6VP100H Series 50 V 512 MHz Broadband RF Power LDMOS Transistor - NI-780-4
Transistor RF FET N-CH 133V 1.8MHz to 2000MHz 4-Pin NI-780 T/R
Avnet Japan
Trans RF MOSFET N-CH 133V 5-Pin Case 465M-01 T/R
RF FET Transistor, 133 VDC, 1.8 MHz, 2000 MHz, NI-780
DIODE GEN PURP 600V 30A TO220AC
RF MOSFET Transistors VHV6 100W 50V ISM
TRANSISTOR, RF, 133V, NI-780H-4L; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 2000MHz; RF Transistor Case: NI-780; No. of Pins: 4Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: -; SVHC: No SVHC (15-Jan-2019)
Alias del produttore
NXP Semiconductors ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. NXP Semiconductors può anche essere conosciuto con i seguenti nomi:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Specifiche tecniche
Physical
Body MaterialCeramic
MountScrew
Number of Pins4
Number of Terminals4
Weight6.395794 g
Technical
Drain to Source Voltage (Vdss)141 V
Frequency512 MHz
Gain25 dB
Gate to Source Voltage (Vgs)10 V
Max Frequency2 GHz
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Breakdown Voltage133 V
Min Operating Temperature-40 °C
Number of Elements2
Output Power100 W
Schedule B8541290080
Test Current100 mA
Test Voltage50 V
Voltage Rating133 V
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per NXP Semiconductors MRFE6VP100HR5.
Conformità
Classificazione ambientale
China RoHSCompliant
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità