NXP Semiconductors MRFE6VP61K25HR5

Wideband Rf Power Ldmos Transistor, 1.8-600 Mhz, 1250 W Cw, 50 V Rohs Compliant: Yes
$ 283.274
EOL
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
DigiKey
2
MRFE6VP61K25HR5CT-ND231Cut Tape
Newark
2
MRFE6VP61K25HR52871Cut Tape
UnikeyICMRFE6VP61K25HR55050Tape & Reel
5h
RFMWMRFE6VP61K25HR501
4h
AvnetMRFE6VP61K25HR5050
5h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per NXP Semiconductors MRFE6VP61K25HR5.

IHS

Datasheet23 pagine12 anni fa

NXP Semiconductors SCT

Freescale Semiconductor

element14 APAC

Future Electronics

Cronologia dell'inventario

Trend di 3 mesi:
-22.84%
Powered bySpectra logo

Supply Chain

Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00
Introduction Date2013-03-25
Lifecycle StatusEOL (Last Updated: 1 month ago)
LTB Date2026-09-30
LTD Date2027-09-30

Parti correlate

NXP SemiconductorsMRFE6VS25NR1
RF Power Transistor,1.8 to 2000 MHz, 25 W, Typ Gain in dB is 25.5 @ 512 MHz, 50 V, LDMOS, SOT1732
Dettagli
VishayIRLL110TRPBF
IRLL110TRPBF N-CHANNEL MOSFET TRANSISTOR, 1.5 A, 100 V, 3 + TAB-PIN SOT-223
Dettagli
NXP SemiconductorsMRFE6VP100HR5
RF Power Transistor,1.8 to 2000 MHz, 100 W, Typ Gain in dB is 27.2 @ 512 MHz, 50 V, LDMOS, SOT1827
Dettagli
VishayIRLR110PBF
Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V
Dettagli
NXP SemiconductorsMRFE6VP6300HR5
RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827
Dettagli
VishayIRLR110TRPBF
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
Dettagli

Descrizioni

Descrizioni di NXP Semiconductors MRFE6VP61K25HR5 fornite dai suoi distributori.

Wideband Rf Power Ldmos Transistor, 1.8-600 Mhz, 1250 W Cw, 50 V Rohs Compliant: Yes
Newark
MRFE6VP6x Series 133 V RF 230 MHz Dual Channel Power LDMOS Transistor - NI-1230
Future Electronics
RF Power Transistor,1.8 to 600 MHz, 1250 W, Typ Gain in dB is 22.9 @ 230 MHz, 50 V, LDMOS, SOT1787
RFMW
Tape & Reel (TR) N-CHANNEL EAR99 MRFE6VP61K25 RF Mosfet 100mA 1250W 24dB 230MHz
Fly-Wing Technology
Transistor RF FET N-CH 133V 1.8MHz to 600MHz 4-Pin NI-1230H-4S T/R
Avnet Japan
Trans RF MOSFET N-CH 125V 5-Pin Case 375D-05 T/R
Verical
RF POWER FET, N CH, 125V 1250W, NI-1230
element14 APAC
RF MOSFET Transistors VHV6 1.25KW ISM NI1230H
Utmel Electronic
10V 1N 133V 562pF@ 50V NI-1230 5.08mm
Unikeyic (ICkey)
RF Power Field-Effect Transistor
IHS
FET RF 2CH 133V 230MHZ NI-1230
Vigor Components
RF FET, 133V, 600MHZ, NI-1230H-4S; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 1.333kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-1230;
Farnell

Immagini

NXP Semiconductors
element14 APAC
Farnell
RFMW
Lanka Micro

Alias del produttore

NXP Semiconductors ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. NXP Semiconductors può anche essere conosciuto con i seguenti nomi:

  • NXP
  • PHILIPS
  • PHIL
  • NXP USA Inc
  • PHI
  • PHILLIPS
  • NXP SEMI
  • NXP SEMICONDUCTOR
  • PHILIPS/NXP
  • PHILIPS SEMICONDUCTORS
  • PHILIP
  • NXP/PHILIPS
  • PHILIPS SEMICONDUCTOR
  • PHILPS
  • PHILIPS COMPONENTS
  • PHILIPS SEMI
  • PHL
  • PHLIPS
  • NXP Semicon
  • NXP / Freescale
  • PHILL
  • PHILIPS ECG
  • Philips Semiconducto
  • PHILLIP
  • PHILI
  • Philips Semiconductors
  • NXP Semiconductors NV
  • NXP

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • MRFE6VP61K25HR5.