NXP Semiconductors MRF6V12250HR5

RF Power Transistor, 960 to 1215 MHz, 275 W, Typ Gain in dB is 20.3 @ 1030 MHz, 50 V, LDMOS, SOT1792
$ 612.64
EOL
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per NXP Semiconductors MRF6V12250HR5.

Future Electronics

Datasheet13 pagine16 anni fa

IHS

Freescale Semiconductor

Cronologia dell'inventario

Trend di 3 mesi:
-100%

Parti alternative

Price @ 1000
$ 612.64
$ 481.395
Stock
65,965
68,867
Authorized Distributors
6
6
Continuous Drain Current (ID)
-
-
Drain to Source Voltage (Vdss)
110 V
-
Frequency
1.03 GHz
1.03 GHz
Gate to Source Voltage (Vgs)
10 V
10 V
Case/Package
-
-
Mount
Screw, Surface Mount
Screw
Max Operating Temperature
225 °C
225 °C
Min Operating Temperature
-65 °C
-65 °C

Supply Chain

Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00
Introduction Date2009-07-24
Lifecycle StatusEOL (Last Updated: 1 month ago)
LTB Date2026-09-30
LTD Date2027-09-30

Parti correlate

NXP SemiconductorsMRF6VP3450HR5
Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V
NXP SemiconductorsMRF6V2010NR1
RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732
NXP SemiconductorsMRF6V2300NBR1
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V
IRLL110TRPBF N-CHANNEL MOSFET TRANSISTOR, 1.5 A, 100 V, 3 + TAB-PIN SOT-223
Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

Descrizioni

Descrizioni di NXP Semiconductors MRF6V12250HR5 fornite dai suoi distributori.

RF Power Transistor,960 to 1215 MHz, 275 W, Typ Gain in dB is 20.3 @ 1030 MHz, 50 V, LDMOS, SOT1792
Pulsed Lateral N-Channel Rf Power Mosfet, 960-1215 Mhz, 275 W, 50 V/ Reel Rohs Compliant: Yes |NXP Semiconductors MRF6V12250HR5
Transistor RF FET N-CH 100V 960MHz to 1215MHz 2-Pin NI-780 T/R
Avnet Japan
Trans RF MOSFET N-CH 100V 2-Pin Case 465-06 T/R
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
IC COMPARATOR 1 GEN PUR SOT23-5
RF MOSFET Transistors VHV6 250W 50V NI780
10V 2.4V 1N 100V NI-780H-2L , 4.32mm
TRANSISTOR, RF, 100V, NI-780H-2L; Drain Source Voltage Vds: 100VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 960MHz; Operating Frequency Max: 1215MHz; RF Transistor Case: NI-780; No. of

Alias del produttore

NXP Semiconductors ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. NXP Semiconductors può anche essere conosciuto con i seguenti nomi:

  • NXP
  • PHILIPS
  • PHIL
  • NXP USA Inc
  • PHI
  • PHILLIPS
  • NXP SEMI
  • NXP SEMICONDUCTOR
  • PHILIPS/NXP
  • PHILIPS SEMICONDUCTORS
  • PHILIP
  • NXP/PHILIPS
  • PHILIPS SEMICONDUCTOR
  • PHILPS
  • PHILIPS COMPONENTS
  • PHILIPS SEMI
  • PHL
  • PHLIPS
  • NXP Semicon
  • NXP / Freescale
  • PHILL
  • PHILIPS ECG
  • Philips Semiconducto
  • PHILLIP
  • PHILI
  • Philips Semiconductors
  • NXP Semiconductors NV
  • NXP