Infineon IRLML2502TRPBF

Transistor: N-MOSFET; unipolar; 12V; 4.3A; 0.05ohm; 1.3W; -55+150 deg.C; SMD; SOT23
$ 0.119
EOL
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRLML2502TRPBF.

IHS

Datasheet9 pagine12 anni fa
Datasheet9 pagine23 anni fa

Newark

element14 APAC

iiiC

RS (Formerly Allied Electronics)

Cronologia dell'inventario

Trend di 3 mesi:
-11.67%

Modelli CAD

Scarica il simbolo Infineon IRLML2502TRPBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.

FONTEeCADmCADFILE
Component Search Engine
SimboloImpronta
3DScarica
EE Concierge
SimboloImpronta
SnapEDA
SimboloImpronta
3DScarica
Ultra Librarian
SimboloImpronta
Scarica
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.

Parti alternative

Questo componente
Parti alternative
Price @ 1000
$ 0.119
$ 0.126
Stock
15,725,450
207,162
Authorized Distributors
6
1
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23
Drain to Source Voltage (Vdss)
20 V
20 V
Continuous Drain Current (ID)
4.2 A
4.2 A
Threshold Voltage
1.2 V
1.2 V
Rds On Max
45 mΩ
-
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
1.25 W
1.25 W
Input Capacitance
740 pF
740 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusEOL (Last Updated: 4 months ago)

Parti correlate

Diodes Inc.DMP2066LSN-7
Mosfet, P-Ch, 20V, 4.6A, Sc-59 Rohs Compliant: Yes |Diodes Inc. DMP2066LSN-7
Single P-Channel 20 V 54 mOhm 6.9 nC HEXFET® Power Mosfet - SOT-23
Transistor: P-MOSFET; unipolar; -20V; -2.3A; 0.065ohm; 1.3W; -55+150 deg.C; SMD; SOT23
onsemiFDN339AN
N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 3A, 35mΩ
Single P-Channel 20 V 1.3 W 8.0 nC Hexfet Power Mosfet Surface Mount - SOT-23
N-Channel Power MOSFET 20V, 3.5A, 71mΩ

Descrizioni

Descrizioni di Infineon IRLML2502TRPBF fornite dai suoi distributori.

Transistor: N-MOSFET; unipolar; 12V; 4.3A; 0.05ohm; 1.3W; -55+150 deg.C; SMD; SOT23
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.035Ohm;ID 4.2A;Micro3;PD 1.25W;VGS +/-12V
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 20 V, 4.2 A, 0.045 ohm, SOT-23, Surface Mount
Trans MOSFET N-CH Si 20V 4.2A 3-Pin SOT-23 T/R / HEXFET Power MOSFET
HEXFET Power MOSFET Small Signal Field-Effect Transistor
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N, MICRO3; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:1.25W; Transistor Case Style:µSOIC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.2A; Package / Case:Micro3; Power Dissipation Pd:1.25W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.2V; Voltage Vgs Rds on Measurement:4.5V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:4.2A; Resistance, Rds On:0.045ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1.2V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:33A; Current, Idss Max:1.0µA; External Depth:2.5mm; External Length / Height:1.12mm; N-channel Gate Charge:12nC; No. of Pins:3; Power Dissipation:1.25W; Power, Pd:1.25W; Quantity, Reel:3000; SMD Marking:1G; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Time, Fall:26s; Time, Rise:10ns; Time, trr Typ:16ns; Transistors, No. of:1; Typ Capacitance Ciss:740pF; Typ Charge Qrr @ Tj = 25°C:8.6nC; Voltage, Vds Max:20V; Voltage, Vgs th Max:1.2V; Voltage, Vgs th Min:0.6V; Width, External:3.05mm; Width, Tape:8mm

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFIRLML2502TRPBF
  • IRLML 2502
  • IRLML-2502
  • IRLML2502
  • IRLML2502 TRPBF
  • IRLML2502-TRPBF
  • IRLML2502TR/PBF
  • IRLML2502TRPBF.
  • IRLML2502TRPBF..
  • SP001558336