Infineon IRLML2502PBF

MOSFET N-Channel 20V 4.2A SOT23

Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:4.2A; On Resistance, Rds(on):0.045ohm; Package/Case:SOT-23; Termination Type:SMD; Power Dissipation, Pd:1.25W; Current, Idm pulse:33A ;RoHS Compliant: Yes

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 12 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 45 / Gate-Source Voltage V = 12 / Fall Time ns = 26 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 54 / Turn-ON Delay Time ns = 7.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.25

MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:1.25W; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Capacitance Ciss Typ:740pF; Charge Qrr @ Tj = 25°C Typ:8.6nC; Current Id Max:4.2A; Current Idss Max:1µA; Current Temperature:25°C; Device Marking:IRLML2502PBF; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Fall Time tf:26s; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; N-channel Gate Charge:12nC; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:1.25W; Power Dissipation Pd:1.25W; Pulse Current Idm:33A; Reverse Recovery Time trr Typ:16ns; Rise Time:10ns; SMD Marking:1G; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.2V; Voltage Vgs th Max:1.2V