Infineon IRLML6402TRPBF
$ 0.116
EOL
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRLML6402TRPBF | 501.000 | 3K | 2d | ||||||||
| Future Electronics | IRLML6402TRPBF | 1.152.000 | 3K | Tape & Reel | ||||||||
| Arrow Electronics | IRLML6402TRPBF | 19.356 | 1 | |||||||||
| Newark | IRLML6402TRPBF | 0 | 1 | Cut Tape | ||||||||
| Farnell | IRLML6402TRPBF. | 0 | 1 | Cut Tape | 3h |
Cronologia dell'inventario
Tendenza a 3 mesi: +11.34%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRLML6402TRPBF.
Modelli CAD
Scarica il simbolo Infineon IRLML6402TRPBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 EE Concierge | SimboloImpronta | ||
 SnapEDA | SimboloImpronta | 3D | Scarica |
 Ultra Librarian | SimboloImpronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-09-23
Lifecycle StatusEOL (Last Updated: 4 months ago)
LTB Date2026-06-30
LTD Date2027-12-31
Parti correlate
InfineonIRLML2502TRPBF
Transistor: N-MOSFET; unipolar; 12V; 4.3A; 0.05ohm; 1.3W; -55+150 deg.C; SMD; SOT23
Diodes Inc.DMP2066LSN-7
Mosfet, P-Ch, 20V, 4.6A, Sc-59 Rohs Compliant: Yes |Diodes Inc. DMP2066LSN-7
Diodes Inc.DMG2305UXQ-7
DMG Series 20 V 5 mOhm SMT P-Channel Enhancement Mode Mosfet - SOT-23
Descrizioni
Descrizioni di Infineon IRLML6402TRPBF fornite dai suoi distributori.
Transistor: P-MOSFET; unipolar; -20V; -2.3A; 0.065ohm; 1.3W; -55+150 deg.C; SMD; SOT23
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.065Ohm;ID -3.7A;Micro3;PD 1.3W;VGS +/-12V
Infineon Technologies P-channel HEXFET power MOSFET, 20 V, 3.7 A, SOT-23, IRLML6402TRPBF
-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Power MOSFET, P Channel, 20 V, 3.7 A, 0.065 ohm, SOT-23, Surface Mount
P CHANNEL MOSFET, -20V, 3.7A SOT-23; TRA; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.7A;
HEXFET Power MOSFET Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.7A; On Resistance, Rds(on):65mohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:Micro3 ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +11.34%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)3.7 A
Current Rating-3.7 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage-20 V
Element ConfigurationSingle
Fall Time381 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance633 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Manufacturer Package IdentifierMicro3
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-550 mV
Number of Channels1
Number of Elements1
On-State Resistance65 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.3 W
Rds On Max65 mΩ
Resistance65 mΩ
Rise Time48 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-550 mV
Turn-Off Delay Time588 ns
Turn-On Delay Time350 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.12 mm
Length3.0226 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRLML6402TRPBF.
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità