Infineon IRFHM831TRPBF

30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
RS (Formerly Allied Electronics)IRFHM831TRPBF04KBulk
10h
FarnellIRFHM831TRPBF01
20h
HQonlineDS0099516378010
>1w
Component Stockers USAIRFHM831TRPBF708
>1wk
Win SourceWS-IRFHM831TRPBF42.90060
21h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRFHM831TRPBF.

ODG (Origin Data Global)

Datasheet10 pagine10 anni fa

IHS

TME

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-07-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)

Parti correlate

InfineonIRLR7807ZPBF
IRLR7807ZPBF N-channel MOSFET Transistor, 43 A, 30 V, 3-Pin DPAK
Dettagli
InfineonIPD060N03LGATMA1
N-Channel 30 V 50 A 6 mOhm Surface Mount OptiMOS Power-Transistor - PG-TO252-3
Dettagli
InfineonIPD50N03S207ATMA1
30V, N-Ch, 7.3 mΩ max, Automotive MOSFET, DPAK, OptiMOS™, PG-TO252-3, RoHS
Dettagli
Diodes Inc.DMN3010LK3-13
Mosfet, N-Ch, 30V, 43A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN3010LK3-13
Dettagli
onsemiFDD6296
Fast Switching N-Channel PowerTrench® MOSFET, 30V, 50A, 8.8mΩ
Dettagli
onsemiNTD70N03RT4G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 10A Ta 32A Tc 75A 1.87W 1.3ns
Dettagli

Descrizioni

Descrizioni di Infineon IRFHM831TRPBF fornite dai suoi distributori.

30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
Infineon SCT
MOSFET, 30V, 24A, 7.8 MOHM, 7.3 NC QG, 0.9 OHM RG, PQFN 3.3X3.3
RS (Formerly Allied Electronics)
Trans MOSFET N-CH 30V 14A 8-Pin PQFN EP T/R
Avnet
HEXFET POWER MOSFET Power Field-Effect Transistor, 14A I(D), 30V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ComSIT Distribution GmbH
N CHAN MOSFET, 30V, 24A, 8-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; No. of Pins:8;RoHS Compliant: Yes
Newark
MOSFET,N CH,DIODE,30V,14A,PQFN33; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):6600µohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:14A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V
Farnell
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 4.7C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
Infineon

Immagini

element14
Augswan
element14 APAC
RS (Formerly Allied Electronics)
TME
International Rectifier

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFHM831
  • SP001575868