Infineon IPD060N03LGATMA1
$ 0.351
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Tendenza a 3 mesi: -2.56%
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Supply Chain
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-10-20
Lifecycle StatusProduction (Last Updated: 4 months ago)
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Descrizioni
Descrizioni di Infineon IPD060N03LGATMA1 fornite dai suoi distributori.
Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK
Mosfet, N Channel, 30V, 50A, To-252; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:50A; On Resistance Rds(On):0.005Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 50 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 6 / Gate-Source Voltage V = 20 / Fall Time ns = 3 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 56
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -2.56%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)50 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.4 nF
Max Dual Supply Voltage30 V
Max Operating Temperature175 °C
Max Power Dissipation56 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance6 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation56 W
Rds On Max6 mΩ
Rise Time3 ns
Schedule B8541290080
Turn-Off Delay Time20 ns
Turn-On Delay Time5 ns
Dimensions
Height2.41 mm
Length6.73 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità