onsemi FDD6296
Obsolete
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-06-09
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-02-17
LTD Date2021-08-17
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Parti correlate
InfineonIRLR7821TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7.5Milliohms;ID 65A;D-Pak (TO-252AA);PD 75W
Diodes Inc.DMN3010LK3-13
Mosfet, N-Ch, 30V, 43A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN3010LK3-13
Descrizioni
Descrizioni di onsemi FDD6296 fornite dai suoi distributori.
Fast Switching N-Channel PowerTrench® MOSFET, 30V, 50A, 8.8mΩ
N-Channel 30 V 8.8 mOhm Surface Mount Fast Switching PowerTrench Mosfet TO-252-3
Power Field-Effect Transistor, 15A I(D), 30V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)15 A
Current Rating50 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance8.8 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.44 nF
Max Operating Temperature175 °C
Max Power Dissipation52 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max8.8 mΩ
Resistance8.8 MΩ
Rise Time6 ns
Turn-Off Delay Time29 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)30 V
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità