Infineon IRLR7807ZPBF
$ 1.93
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Modelli CAD
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-04-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
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InfineonIRFHM831TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
Descrizioni
Descrizioni di Infineon IRLR7807ZPBF fornite dai suoi distributori.
IRLR7807ZPBF N-channel MOSFET Transistor, 43 A, 30 V, 3-Pin DPAK
Single N-Channel 30 V 13.8 mOhm 7 nC HEXFET® Power Mosfet - TO-252AA
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 30A I(D), 30V, 0.0138ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
MOSFET, N, LOGIC, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):13.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:40W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:43A; Package / Case:DPAK; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Pulse Current Idm:170A; SMD Marking:IRLR7807Z; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Current Rating43 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance13.8 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time3.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance780 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation40 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
On-State Resistance13.8 mΩ
Package Quantity3000
Power Dissipation40 W
Rds On Max13.8 mΩ
Recovery Time35 ns
Resistance13.8 MΩ
Rise Time28 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time9.8 ns
Turn-On Delay Time7.1 ns
Voltage Rating (DC)30 V
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità