Infineon IRFB7446PBF
$ 0.435
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Cronologia dell'inventario
Tendenza a 3 mesi: -4.33%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-09-11
Lifecycle StatusProduction (Last Updated: 3 months ago)
Parti correlate
InfineonIRFB7440PBF
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
InfineonIRF3709PBF
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A⑥) | MOSFET N-CH 30V 90A TO-220AB
VishaySUP90N04-3M3P-GE3
MOSFET,N CH,W DIODE,40V,90A,TO220AB; Transistor Polarity:N Channel; Continuous D
Descrizioni
Descrizioni di Infineon IRFB7446PBF fornite dai suoi distributori.
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
Infineon SCT
Single N-Channel 40 V 3.3 mOhm 62 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 40V 123A 3-Pin(3+Tab) TO-220AB Tube
HEXFET POWER MOSFET Power Field-Effect Transistor, 120A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 40V, 118A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:99W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -4.33%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.183 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation99 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
On-State Resistance3.3 mΩ
Package Quantity1000
Power Dissipation99 W
Rds On Max3.3 mΩ
Recovery Time22 ns
Rise Time34 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time33 ns
Turn-On Delay Time11 ns
Dimensions
Height20.56 mm
Length10.67 mm
Width4.83 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità