onsemi FCP11N60F

N-Channel Power MOSFET, SUPERFET®, FRFET®, 600 V, 11 A, 380 mΩ, TO-220
$ 1.669
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Fairchild Semiconductor

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Pièces de rechange

Ce composant
Pièces de rechange
onsemiFCP11N60F
InfineonSPP11N60C3XKSA1
InfineonSPP11N60C3XKSA1
Price @ 1000
$ 1.669
$ 1.238
$ 1.238
Stock
243,361
1,264,356
1,264,356
Authorized Distributors
6
6
6
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220
TO-220
Drain to Source Voltage (Vdss)
600 V
600 V
600 V
Continuous Drain Current (ID)
11 A
11 A
11 A
Threshold Voltage
5 V
-
-
Rds On Max
380 mΩ
380 mΩ
380 mΩ
Gate to Source Voltage (Vgs)
30 V
20 V
20 V
Power Dissipation
125 W
125 W
125 W
Input Capacitance
1.49 nF
1.2 nF
1.2 nF

Chaîne d'approvisionnement

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-07-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Pièces détachées

onsemiFCP11N60
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220
Détails
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Single N-Channel 500 V 0.85 Ohms Flange Mount Power Mosfet - TO-220-3
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VishayIRFB13N50APBF
Single N-Channel 500 V 0.45 Ohms Flange Mount Power Mosfet - TO-220-3
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VishayIRFB9N60APBF
Single N-Channel 500 V 0.75 Ohms Flange Mount Power Mosfet - TO-220AB
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onsemiFQP12N60C
Power MOSFET, N-Channel, QFET®, 600 V, 12 A, 650 mΩ, TO-220
Détails

Descriptions

Descriptions de onsemi FCP11N60F fournies par ses distributeurs.

N-Channel Power MOSFET, SUPERFET®, FRFET®, 600 V, 11 A, 380 mΩ, TO-220
onsemi
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Rail
Verical
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Semicontronic
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):380mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Package / Case:TO-220; Pin Configuration:1(G), 2(D), 3(S); Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:33A; Repetitive Avalanche Energy Max:12.5mJ; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
element14 APAC
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Fairchild Semiconductor
SuperFETTM is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Product Highlights: 650V @TJ = 150C Typ. RDS(on) = 0.32W Fast Recovery Type (trr = 120ns) Ultra Low Gate Charge (typ. Qg = 40nC) Low Effective Output Capacitance (typ. Cosseff.=95pF) 100% avalanche tested
North Star Micro

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element14 APAC
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