Infineon IRFR7446PBF
Obsolete
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Pièces de rechange
Ce composant
Pièces de rechange
Price @ 1000
$ 0.443
Stock
52,110
1,124,498
Authorized Distributors
1
6
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
TO-252-3
Drain to Source Voltage (Vdss)
40 V
40 V
Continuous Drain Current (ID)
56 A
56 A
Threshold Voltage
3 V
3 V
Rds On Max
3.9 mΩ
3.9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
98 W
98 W
Input Capacitance
3.15 nF
3.15 nF
Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-03-28
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
Pièces détachées
InfineonIRFR7446TRPBF
40V Single N-Channel HEXFET Power MOSFET in a Lead Free D-Pak package, DPAK-3, RoHS
InfineonIPD50N04S4L08ATMA1
Power MOSFET, N Channel, 40 V, 50 A, 0.0062 ohm, TO-252 (DPAK), Surface Mount
Descriptions
Descriptions de Infineon IRFR7446PBF fournies par ses distributeurs.
40V Single N-Channel HEXFET Power MOSFET in a Lead Free D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 56A I(D), 40V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 40V, 56A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Po
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
Alias du fabricant
Infineon possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Infineon peut également être connu sous les noms suivants :
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Spécifications techniques
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)56 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance3.9 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.15 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation98 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance3.9 mΩ
Package Quantity3000
Power Dissipation98 W
Rds On Max3.9 mΩ
Rise Time13 ns
Threshold Voltage3 V
Turn-Off Delay Time32 ns
Turn-On Delay Time9.8 ns
Dimensions
Height2.52 mm
Conformité
Classification environnementale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Déclarations de conformité