Infineon IRF1010EPBF
$ 0.52
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Tendance sur 3 mois : +93.26%
Modèles CAO
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Modèles CAO
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Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-08-06
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2014-01-09
LTD Date2014-07-09
Pièces détachées
InfineonIRF1010NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 85A;TO-220AB;PD 180W;gFS 32S
InfineonIRF1010EZPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 6.8Milliohms;ID 84A;TO-220AB;PD 140W;-55deg
InfineonIRF1018EPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.1Milliohms;ID 79A;TO-220AB;PD 110W;-55deg
Descriptions
Descriptions de Infineon IRF1010EPBF fournies par ses distributeurs.
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 84A;TO-220AB;PD 200W;gFS 69S
Single N-Channel 60 V 12 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 60 V, 81 A, 0.012 ohm, TO-220AB, Through Hole
Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220AB
Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 60V, 84A To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:84A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRF1010EPBF.
The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 84 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 12 / Gate-Source Voltage V = 20 / Fall Time ns = 53 / Rise Time ns = 78 / Turn-OFF Delay Time ns = 48 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200
MOSFET, N, 60V, 81A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:81A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:84A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:12mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:330A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Alias du fabricant
Infineon possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Infineon peut également être connu sous les noms suivants :
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historique des stocks
Tendance sur 3 mois : +93.26%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating84 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance12 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time53 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.21 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation170 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance12 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation170 W
Rds On Max12 mΩ
Resistance12 mΩ
Rise Time78 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time48 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)60 V
Dimensions
Height19.8 mm
Lead Pitch2.54 mm
Length10.668 mm
Width4.826 mm
Conformité
Classification environnementale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Déclarations de conformité