onsemi RFP70N06

Transistor RFP70N06 N-Channel MOSFET 60 Volt 70 Amp TO-220AB

Power MOSFET, N Channel, 60 V, 70 A, 0.014 ohm, TO-220AB, Through Hole

Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-220AB Rail

N-Channel Power MOSFET 60V, 70A, 14mΩ

Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA78440.

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:60V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Current Temperature:25°C; Device Marking:RFP70N06; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:14mohm; Package / Case:TO-220AB; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V