Infineon IRF1010EZPBF

MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 6.8Milliohms;ID 84A;TO-220AB;PD 140W;-55deg

Single N-Channel 60 V 8.5 mOhm 86 nC HEXFET® Power Mosfet - TO-220-3

60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220AB

Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, 60V, 84A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:60V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:1.11°C/W; On State resistance @ Vgs = 10V:8.5ohm; Package / Case:TO-220AB; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:340A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.