Vishay SI2316BDS-T1-E3
$ 0.275
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | SI2316BDS-T1-E3 | 0 | 1 | 18h | ||||||||
| TTI | SI2316BDS-T1-E3 | 0 | 3K | Tape & Reel | 22h | |||||||
| Avnet | SI2316BDS-T1-E3 | 0 | 3K | 4d | ||||||||
| TTI Asia | SI2316BDS-T1-E3 | Kontakt | 1d | |||||||||
| Win Source | WS-SI2316BDS-T1-E3 | 60.000 | 35 | 20h |
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für Vishay SI2316BDS-T1-E3 herunter.
Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
$ 0.275
$ 0.438
Stock
263,745
58,125
Authorized Distributors
4
4
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23-3
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
4.5 A
4.5 A
Threshold Voltage
-
3 V
Rds On Max
80 mΩ
50 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.25 W
-
Input Capacitance
350 pF
350 pF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-08-28
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Verwandte Teile
Diodes Inc.ZXMN3A14FTA
ZXMN3A14 Series 30 V 0.065 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3
VishaySI2307CDS-T1-GE3
Power MOSFET, P Channel, 30 V, 3.5 A, 88 MilliOhms, SOT-23 (TO-236), 3 Pins, Surface Mount
VishaySI2307BDS-T1-GE3
Si2307BDS Series 30 V 2.5 A Surface Mount P-Channel Mosfet - SOT-23-3 (TO-236)
Beschreibungen
Beschreibungen von Vishay SI2316BDS-T1-E3, die von den Distributoren bereitgestellt werden.
Single N-Channel 30 V 0.05 Ohms Surface Mount Power Mosfet - SOT-23
MOSFET Devices; VISHAY; SI2316BDS-T1-E3; 30 V; 3.9 A; 20 V; 1.25 W
Trans MOSFET N-CH 30V 4.5A 3-Pin SOT-23 T/R
Power Field-Effect Transistor, 4.5A I(D), 30V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.9A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:1.66W; No. Of Pins:3Pins Rohs Compliant: No |Vishay SI2316BDS-T1-E3.
Aliasnamen des Herstellers
Vishay verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Vishay ist möglicherweise auch unter den folgenden Namen bekannt:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Technische Spezifikationen
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight1.437803 g
Technical
Continuous Drain Current (ID)4.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Operating Temperature150 °C
Max Power Dissipation1.66 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.25 W
Rds On Max80 mΩ
Resistance50 mΩ
Rise Time65 ns
Schedule B8541290080
Turn-Off Delay Time11 ns
Turn-On Delay Time20 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm
Datenblätter und Dokumente
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Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen