STMicroelectronics STB180N55F3
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | STB180N55F3 | 0 | 1K | 3h | ||||||||
| Farnell | STB180N55F3 | 0 | 1 | 1d | ||||||||
| Win Source | WS-STB180N55F3 | 20 | 17 | 2h | ||||||||
| Worldway Electronics | STB180N55F3 | 16.582 | 7 | Tape & Reel | 1h | |||||||
| Utmel Electronic | 2381-STB180N55F3 | 9.000 | 11h |
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für STMicroelectronics STB180N55F3 herunter.
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-04-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-01-29
LTD Date2014-07-29
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Beschreibungen
Beschreibungen von STMicroelectronics STB180N55F3, die von den Distributoren bereitgestellt werden.
Trans MOSFET N-CH 55V 120A 3-Pin(2+Tab) D2PAK T/R
N-channel 55V - 2.9mOhm - 120A - D2PAK/TO-220
MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation
MOSFET, N, D2-PAK; Current, Id cont:120A; Resistance, Rds on:0.0035R; Case style:D2-Pak; Current, Idm pulse:480A; Marking, SMD:180N55F3; Pins, No. of:3; Power dissipation:330W; Termination Type:SMD; Transistor polarity:N; Voltage, RoHS Compliant: Yes
Aliasnamen des Herstellers
STMicroelectronics verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. STMicroelectronics ist möglicherweise auch unter den folgenden Namen bekannt:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance3.5 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.8 nF
Max Operating Temperature175 °C
Max Power Dissipation330 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape (CT)
Power Dissipation330 W
Rds On Max3.5 mΩ
Rise Time150 ns
Schedule B8541290080
Turn-Off Delay Time110 ns
Turn-On Delay Time25 ns
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für STMicroelectronics STB180N55F3 herunter.
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant