onsemi RFD14N05LSM

N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ
$ 0.486
Production
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DistributorSKUMinPkg
Future ElectronicsRFD14N05LSM5.92830Tube
AvnetRFD14N05LSM2.46875
4d
Newark
2
RFD14N05LSM2.46875
Arrow Electronics
3
RFD14N05LSM1.9581
Verical
4
RFD14N05LSM36318

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Newark

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Alternative Teile

Dieser Teil
Alternative Teile
onsemiRFD14N05LSM
onsemiRFD14N05LSM9A
Price @ 1000
$ 0.486
$ 0.343
Stock
351,260
390,589
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
50 V
50 V
Continuous Drain Current (ID)
14 A
14 A
Threshold Voltage
2 V
2 V
Rds On Max
100 mΩ
100 mΩ
Gate to Source Voltage (Vgs)
10 V
10 V
Power Dissipation
48 W
48 W
Input Capacitance
670 pF
670 pF

Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-04-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Beschreibungen

Beschreibungen von onsemi RFD14N05LSM, die von den Distributoren bereitgestellt werden.

N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ
onsemi
50 V, 14 A, 0.100 OHM, LOGIC LEVEL, N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
ComSIT Distribution GmbH
MOSFET, N, LOGIC, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:50V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:14A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:48W; Power Dissipation Pd:40W; Pulse Current Idm:20A; SMD Marking:RFD14N05; Termination Type:SMD; Voltage Vds Typ:50V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
element14 APAC
These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.
Fairchild Semiconductor

Bilder

Distrelec
element14 APAC
Farnell
TME
Electro Sonic
iiiC
Distrelec
LZChips
Future Electronics
Rochester Electronics

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  • ON Semiconductor Cor
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  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
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  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
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  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
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  • onsemiconductor
  • On Semiconductor Ltd

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • RFD14N05LSM.